Generally yes, but it depends on the resist and the ebeam system you're using. AZ5214 can be used in electron beam direct write(EBDW) equipment as well as Shipley S1813. Most Novalak resin based resists  and PMMA resists should work. SU-8 (negative epoxy resist) can also be used in EBDW equipment but the depth that you can expose will be limited by your electron energy, e.g. a Raith 150 has a max 30kV and will only expose to about 7-10 microns depth.

In addition to Ron's answer I just want to add two more "classic" photoresists, UV6 and UVN30, which can be used in electron beam lithography. Please note that most chemically amplified resist, such as the aforementioned UV6 and UVN30, tend to have pretty high sensitivities when used as EBL resist, so finding good exposure parameters (dose, beam step size & beam current) can be a bit tricky.

Thanks for the input.

I have got Vistec/EBPG5000plusES Electron Beam Lithography system at my lab which I have to use in order to transfer my pattern on my wafer. The material being Lithium Niobate is difficult to etch as well, requiring dry etching by Argon ions for atleast about 10 minutes. All the e-beam resists that are available are too weak to last that long so I have to undertake another tedious process of mask making. 

As for all the available literature on the subject that I came across use photolithography and the photoresist seems to be able to withstand argon ions for that long. That is why I was wondering if I could use photoresist instead.

What is the beam energy on the ion mill? I have used Shipley S1813 for ion milling Pt but you need to be able to keep the substrate cool or it will burn making it very hard to remove and possibly causing some holes to appear. I currently use SU-8 for ion milling and it works well but is a negative resist. You should be able to expose SU-8 to 25 microns or more with your lithography system. I usually use

I used dry etching using Argon and SF6 as etchants with the following parameters:

SF6 4sccm

Ar 48sccm

ICP 1000w

RIE 150w

pressure 4mT

time: 3 minutes

These parameters did give me a good etch depth of about 300nm but I had to use an aluminium mask as well. The resist that I used was ZEP-520a which was about 550nm thick, made using 2000 rpm and 3 minutes of bake time as 180 degrees celcius

Do you know what the bias voltage is when your RIE is at 150W? You may want to try to decrease your bias voltage to reduce the mechanical sputtering from Ar ions. If your non-specific etch is too much faster than the chemical etch of your F ions, you will get poor selectivity. Are you cooling the substrate? You should try to cool it if you are not since SF6/Ar @ 1000W is going to get quite hot. You might also want to increase your ICP power, this should increase your chemical etch rate by producing more F ions from the SF6. 1200 to 1500W seems to be common for SF6 etch gas chemistries. Increasing the number of negative ions relative to positive ions should also decrease the self bias voltage.

Generally, any diazonaphthoquinone based resist can be used in e-Beam. Litho responses will vary.  Problem with most e-beam tools is acceleration.  Use lower MEV tools to achieve better dose efficiency, but litho will suffer.

Did you consider HSQ resist? it is an inorganic negative tone e-beam resist, leaving a pure SiO2 mask after exposure and development. This SiO2 has a much higher etch resistance in Ar (and certainly in O2) plasmas. It's usefulness in your case of course depends on whether you need to remove the resist afterwards from the Li-Niobate or not. For some applications an additional SiO2 covering might give no problem or even be beneficial. For SiO2 removal you would need either fluorine containing RIE processes or wet-chemical HF etching; these steps may also affect your Li Niobate.

I want to use  ZEP520A resist for my quartz substrate. Can be use this photo resist with RAITH 150.