Yes, MOSFETs can have asymmetric source and drain. Many researchers are doing such type of researches and have found some good results on especially mobility without affecting any transistor actions.
Asymmetric in the sense on the basis of doping concentration, structure size etc.
Hypothetically, drain and source are interchangeable and they are symmetric, however in real situations the source terminal is connected to the body; so that the body-diode will change certain performance when it is forward bias. If you would like to read research on these please check https://www.researchgate.net/publication/274701915_An_extra_low_frequency_RS-SCALDO_technique_A_new_approach_to_design_Voltage_Regulator_Modules also available in IEEE http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=7104629
Conference Paper An extra low frequency RS-SCALDO technique: A new approach t...