While calibrating the TCAD simulation results of TFET with that of the experimental data, we take reduced mass m(r) as the fitting parameter. The theory behind it is that the net recombination rate due to BTBT is
Rnet = Apath(F/F0)^P exp(-Bpath/F).
Apath and Bpath have default values in TCAD. The reduced mass m(r) connects both Apath and Bpath. But all of this is under the assumption that there is a uniform electric field.
If we are using non-local BTBT model for simulation in which the generation rate is based on the bend bending caused due to the electric field present in the device. Does it mean that the electric field will be non-uniform?
And if it is correct, can we still use m(r) as a fitting parameter while doing the simulation using the non-local BTBT model?
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