Hi all,
Do you have any strategy to clean the aluminum etch residues on PECVD oxide layer? There is also a ARC TiN layer on Al. The etch gases are Cl2 and HBr. O2 plasma is applied right after metal etch.
The focused ion beam inspection shows no residues but still have some leak current between the submicron metal patterns.
I couldn't reach the paper 'Post Metal Etch Treatment for Submicron Applications'. It would be really appreciated if anyone who has the paper shares it.
Have you tried CF4 plasma already? By searching for answers, I've got this from the book "microelectronic materials and processes":
" This treatment (CF4 plasma or CHF3 plasma) converts the chloride residues into non-hygroscopic fluorides and deposits a fluorocarbon polymer film onto the Al surface so that it can be exposed to ambient conditions without immediate corrosion. Subsequently, a nitric acid rinse can be used to remove the fluoride layer an to regrow the protective oxide. Chlorine based plasma etching of aluminum films causes serious degradation of photoresist materials. "
Hope it can help you.
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