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Hi all, Do you have any strategy to clean the aluminum etch residues on PECVD oxide layer? There is also a ARC TiN layer on Al. The etch gases are Cl2 and HBr. O2 plasma is applied right after...
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I am trying to remove LPCVD nitride from Si epitaxial layer using hot (150C) phosphoric acid. Anyone has experience whether the hot acid solution induces any damage on the epitaxial layer?
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