I wanted to simulate High electron mobility transistor using semiconductor module in COMSOL Multiphysics for the IV characteristics.
You can explore default examples (from Application libraries) of MOSFET simulation and make your own model on their basis
Dear Arteev sir,
Thank you for the answer. Even though i have a MOSFET design in COMSOL Application libraries. I could not make HEMT structure based on the MOSFET design. Due to the depth of doping. I wanted to make the model attached with this message.
As far as I know, COMSOL does not have a default polarization charge model for III-nitrides, so one should calculate the charges (see, for example, Article Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum...
) and add them as surface charge density at the interfaces.Secondly, one may face convergence problem when simulating wide bandgap semiconductors (especially with high polarization charge densities), so one should tune the solver manually.
Here's a little tip: increase interface charge densities iteratively; the solution on the previous step is used as an initial guess for the next one.
Dear Arteev,
Thank you so much for your answer. Kindly let me know what type of tool you are using for designing HEMT. Its possible i will send comsol file to you. Kindly do the needful.
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