Don't go beyond 500C!!,

since you are using glass as the substrate

Ok sir.thank u for reply

I agréé with Kompa

Don't go beyond 500C!!,

ok sir,Thank you fr ur advice.Will do same.

Dear Sachin,

Chemical vapor deposition (CVD) technique is generally used to investigate the electrical properties of Titanium dioxide (TiO2) thin film deposited onto a glass substrate. Annealed Temperature for thin film is suggested at 300°C-1000°C. Instrument for thin film characterizations can be done using Atomic Force Microscope (AFM), X-Ray Diffraction (XRD), Ultraviolet-Visible spectroscopy (UV-Vis), Field Emission Scanning Electron Microscope (FE-SEM) and two point probe I-V measurement.

As we know that roughness of thin film may increase as the annealing temperature increased 300 degree centigrade to 1000 degree centigrade, .AFM image could be useful to characterize the surface morphology of TiO2 thin film. Annealing can change the resistivity of TiO2 due to the temperature applied on the thin film. Characterization through FE-SEM equipment can be useful for identifying the presence of TiO2 nano-particles on glass substrate. If you need to indetify the optical property, it s advised to use UV-Vis to obtain the band gap energy for each TiO2 thin film annealed at different temperature.

****Your question is what annealing temperature is best for TiO2 thin film?

(i) For higher resistivity and conductivity- I may suggest you to go ahead with 10000C , if your purpose imply to use resistivity and conductivity of film. At higher annealing temperature (1000 degree centigrade) resistivity and conductivity both will be high.

(ii) For achieving higher Electrical properties- higher annealing temperature will increase the lectrical property. Reason behind is simple, an increase in grain size affects the electrical properties and improve the migration of electrons within the TiO2 thin film from one grain to the other.

Ashish