Ibrahim, what is your diode structure?would you display your I-V characteristics. What are the ideality factor of these linear pieces? This is required to share in the discussion.
Dr. Kadir Ejderha:
i mean by Oragnic diode:
Metal contact/ Organic layer/ n-inorganic Substrate/ Metal contact
Dr. Abdelhalim Zekry:
for linear pieces i just calculate Slopes like in literature to know the dominant mechanism.
The major problem is the appearance of 4 region ; How can explain this ???
Dear Ibrahim, Is there any problem to tell us the values of the ideality factor of every piece starting from the low current to high current. The ideality factor can be calculated from the relation delta V/ nVt log10 exp. = log10 I2/I1 where delta v corresponds to the current range I2 to I1 . Applying this it is assumed that current follows the equation
I= Is exp (V/ nVt), which is the Shockley diode equation.
At first to continue the discussion, i would like to see my answer on a similar question in the Link:https://www.researchgate.net/post/How_do_I_calculate_the_ideality_factor_from_dark_I-V_characteristics_of_polymer_bulk-heterojunctions
Then you have to answer the following questions:
-What is conduction type of your organic layer? Do it form hetero junction with the n-Si.
- What is the n-Si doping and what is metal used to contact it?
- What is type of the metal -organic junction, is it ohmic or rectifying/?
-If your junctions are rectifying then you have a stack of junctions connected in series, such multi junction device needs more investigations to determine the conduction mechanisms.
When you answer these questions, i am ready to continue the discussion with you tell you get the operating principles of your device.
But before i end my comment =, i would like to advice you to add ohmic metallc contacts to the different layes such that you can measure every junction separately.
The key of exploring your i-v is to know the conduction state of the different junctions of your complicated structure.
wish you success
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