Basically we are trying to transfer deposited gold(e-beam evaporator) on si wafer to small pieces of si wafer by template stripping process. So we are trying to get as much as flat surface of si. Therfore, we plan to etch the si wafer and then we wanna deposit au on si wafer. But the problem is the bonding between au and si (etched) is very strong that we could not transfer it to small pieces of si wafer. So anybody know whats going on?

But if we use unetched si, it works perfectly.

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