why ZnO acquire n type behavior regardless the fabrication method similar to the p type behavior of NiO nano particles. I like to know about the physics behind it.
The type of semiconductor depended on the position of Fermi level, if Fermi level near the conductive band that leads to N-type (like ZnO), and inverse, the Fermi level is near a valance band that leads to form P-type (like NiO).
The type of semiconductor depended on the position of Fermi level, if Fermi level near the conductive band that leads to N-type (like ZnO), and inverse, the Fermi level is near a valance band that leads to form P-type (like NiO).
Because the majority of carriers for ZnO are electrons (negative carriers) and the minorities are holes (positive carriers) and it is Inversely for NiO . These can be known directly by Hall effect experiment.
It determine the Vacancies (Defects) in the ZnO. We know that the intrinsic semiconductor means electrons and holes concentrations are equal, So fermi level lie in the middle. From my knowledge apart from the carrier concentration, defects also plays the reason for your question. But I am also waiting for the exact mechanism or reason.
Because it contains the abundance of electrons or that the majority of the carriers are electrons while the abundance contains holes or that the majority of the carriers are vacancies carry positive charges that depends upon the atomic bonding in the compound and the number of element equivalence and whether the compound gives electrons or receives electrons.