Please explain the physics behind interface passivation by using intrinsic amorphous silicon. Can we replace amorphous silicon with microcrystalline silicon with similar quality?
Dear Dr. Muzaffar Imam ,
I suggest you to have a first look at the following sources:
-Wikipedia - Amorphous silicon – Available at: https://en.wikipedia.org/wiki/Amorphous_silicon
-Optimisation of Intrinsic a-Si:H Passivation Layers in Crystalline-amorphous Silicon Heterojunction Solar Cells
J. Ge, Zhi Peng Gordon LING, , Johnson Wong, Thomas Mueller, Armin G. ABERLE
Energy Procedia 15:107–117 (2012)
Available on RG at: https://www.researchgate.net/publication/257711394_Optimisation_of_Intrinsic_a-SiH_Passivation_Layers_in_Crystalline-amorphous_Silicon_Heterojunction_Solar_Cells
-Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells
Qiang Li, Ke Tao, Yun Sun, Rui Jia, Shao-Meng Wang, Zhi Jin, Xin-Yu Liu
Solar Energy, Volume 135, Pages 487-492 (2016)
Available at: https://www.sciencedirect.com/science/article/abs/pii/S0038092X16301918
Good luck and my best regards, Pierluigi Traverso.
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