While simulating transfer characteristics of TIPS-pentacene based OFET on Si/SiO2 and ITO coated PET substrate, simulation transfer characteristics matches with experimental values from 0 to -5V gate voltage. However, it differs when the gate voltage varying from 0 to 2V. In experiment, the Ioff current is 10-12 A while in the experimental, it is 10-20A. How to overcome this mismatch? 

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