Hi
I have deposited silicon nitride thin films by RF sputtering technique on 14 substrates. I changed the parameters RF power, sputtering pressure and target to substrate distance.
The substrate I used was Silicon wafer and I coated 1.5 um SiO2 on top of silicon wafer. Attached is the XRD spectra. I got a single peak only between 50o to 55o . From research gate discussion, I found peak came from 311 planes oriented at approximately 55/2 = 27.5o from wafer surface.
My questions are:
1) Can anyone please give a strong evidence (journal reference) for peak at 50 to 55 is 311 ?
2) Why the peaks are shifting ?
Thanks in advance