Hi

I have deposited silicon nitride thin films by RF sputtering technique on 14 substrates. I changed the parameters RF power, sputtering pressure and target to substrate distance. 

The substrate I used was Silicon wafer and I coated 1.5 um SiO2 on top of silicon wafer. Attached is the XRD spectra. I got a single peak only between 50o to 55o . From research gate discussion, I found peak came from 311 planes oriented at approximately 55/2 = 27.5o from wafer surface.

My questions are:

1) Can anyone please give a strong evidence (journal reference) for peak at 50 to 55 is 311 ?

2) Why the peaks are shifting ?

Thanks in advance

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