Dear Muzaffar,

welcome,

Assuming traps at the grain boundary will lead to trapping the majority carriers adjacent of the grain boundary , this will lead to the depletion of the region around the grain boundaries and consequently electric dipoles will be formed. Assocated with this dipole a potential barrier region will be formed around the boundary. This will cause band bending in around the grain boundary. In case n-type grains upward bending will be formed with a spike form whose peak value at the grain boundary. In case of p-type material a dip in the energy band will be formed.

I treated this point before long time ago and in spite of its importance the paper remained very little visited by the researchers. No there is interest in the transport of grained materials. I would like to invite you to see this paper in the link: Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions

Best wishes

Dear Abdelhalim Zekry

Thank you so much for very informative comment. I am fully satisfied with your answer sir. I will definitely refer the article that you have recommended. Sir, I have another query regarding the above topic like how can one mathematically model the height of notch that was coming? and other related physics.If you have any references you may please share to me that would be so kind of you. Thank You again.

Dear Muzaffar, i delivered a complete electrostatic model of the grain boundary, you need only to study it thoroughly.

In addition i want that you see my old jeweler paper which is left undiscovered till now. There is complete model for the grain boundary and its effects on the majority carrier transport. Really this is one of the hidden Zekry Jewels!!

When you see it you will be surprised how much it could be useful to you.

For the paper please follow the link: Article A. Elemawy, A. Zekry, M. El-Koosy and H.F. Ragai, “Propertie...

Best wishes

Dear Abdelhalim, Thank You so much for your valuable answer. I will surely refer your paper.