Si/Al2O3(7~8nm)/Mo
Al2O3 ALD 200℃ 50cycle, I know that the quality this dielectric film is not good.
F 10kHz, AC level 30mV
C continues to increase and does not saturate in the accumulation area, even if the voltage range is further increased.
please help me
To my mind such kind of increasing of C by 200oC is due to the electromigration of atoms of oxygen from Al2O3 to inside the silicon area by applied electric field. For electrodes such as following: work function of MoW 4.3 eV, work function for Silicon (111) is 4.6 eV, for Ni work function is 4.5 eV, Electrical properties are the most important for device application of thin film material. There is a strict difference in electric properties for silicon films with oxidized interfaced silicon layer. The boundary region in silicon film determined the spectral dependence of electric current. Various current-voltage characteristics show the great role of oxidized silicon in grain boundary area and creation of volume charge by induced dipoles appeared in external electric field which results in nonlinear current-voltage characteristics. Thre are silicon-oxide dipoles which induce the polarization charges. These charges added to sum of charge and cause the changing in C-V characteristic. It is easy to test this assumption. Instead the AC voltage, may be use, DC voltage and change the polarity for two different samles. If their C-V characteristics will be different it is truethful supposal, but if it is no, false.
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