Dear Researchers

Greetings from my side.

Trap assisted tunneling (TAT) model is a famous modeled, studied in MOS devices.

In a paper (Simplified closed-form trap assisted tunneling model applied to nitrided oxide

dielectric capacitors by S. Fleischer, P. T. Lai, and Y. C. Cheng) I found that the units of TAT current density do not equate to each other.

Although it is a very small problem as far as the platform is concerned (research gate) is concerned but still I want to know where I am doing the mistake.

I have tried every possible thing to match both side units.

For your convenience, I am attaching the particular page.

Thank you