I am not using sentaurus workbench but the other way. Right now I am simulating a simple 2D sillicon PN junction solar cell with no edge effect (recombination etc). The contact is perfect so no contact resist or recombination or refectance.So theoriticaly speaking the size would not make a difference to the performance. But the reality is that when the cell width is less than 100 um, all the output parameters stays the same (Jsc, Voc,FF). But after the cell width increase to over 100um, as it increase, Voc keep decreasing. And the Jsc only decrease one time right after the cell width beyond 100um and then it stays the same.
Anyone knows how this is happening?
Dear Shujian,
In fact the edge effect becomes apparent at the the small width. IN YOUR simulation you observe a CONTINUOUS DECREASE OF THE Voc and single drop of the Jsc.This is not a physical effect since the device technological parameters remains the same except the width increase.
So, i would suspect that the simulation results are in error. The space discretization of the device is not accurate enough to obtain correct potential and carrier distributions.
So, i would propose to study the effect of the discritization or meshing on the simulation results. The meshing must so fine to stabilize the solution.
Numerical solutions must be verified for their correctness.
Best wishes
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