SiC have different polytypes. While epitaxial growth of Graphene on SicC using CVD and thermal decomposition 4-H, and 6-H is prefered?
Because 4H-SiC and 6H-SiC are commercially available in the form of semi-insulating on-axis wafers. Of course, other polytypes would be welcome, if they existed. Naturally, for electronics and magnetic field sensors the closer to 3C the hexagonal polytype would be the better, since 6H induces lower intrinsic as-grown concentration than 4H and so on. What we have on SiC is the substrate-hexagonality-dependent minimum charge carrier concentration and the minimum upshift from charge neutrality point.
Thanks Ciuk to answering the question. You mention about the hexagonality dependent carrier concentration and upshift from neutrality point. I don't understand much about it. Is this is due to difference in stacking order? Which prototype have minimum hexagonality- dependent minimum charge carrier concentration and upshift ?
The less frequent the stacking faults the lower would be the as-grown charge carrier concentration (n_10H
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