Whether the reason is as follows? Predominantly HPGe is p type. So compensation of large p type impurity requires more n+ contact. (700um) But n type Ge is made by doping of excess addition of n type impurity in p type HPGe. So n type impurity addition always slightly excess of p type impurity. Hence, slight excess n type impurity in n type HPGe requires, p+ contact with very less thickness. (0.3um)
Dear Ds,
Please refer to the chapter on germanium gamma-ray detectors in the textbook by G.F. Knoll, Radiation Detection and Measurement. Sure you will find it at the library of your institute.
Best regards
Dear Ds,
It is written in the description of the planar configuration (p.406-407 in 2000 edition).
It is a matter of process: Li diffusion for N+ contacts versus B implantation for P+ contacts.
So, it is no generality for Ge detectors: it depends on the process.
Best regards
David
Dear David, You mean to say the process of adding the contact is different. Li is added by diffusion process but B is added by implantation. In Ion implantation we can achieve thin contact, but in diffusion we can get only Thick contact. Fine. It is liks DJD vs PIPS detector for alpha. Can you tell me why Li is also not added as contact by Ion implantation method?
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