The shift in crystalline silicon (c-Si) cell technology from p-type to n-type has been driven by several factors, including improvements in cell efficiency, reliability, and manufacturing cost.

Historically, p-type silicon has been the dominant technology for c-Si solar cells due to its relatively high bulk lifetime and low surface recombination velocity. However, p-type silicon has limitations that can reduce cell efficiency, such as boron-oxygen defects and light-induced degradation (LID). Additionally, the use of p-type dopants, such as boron, can result in increased manufacturing costs due to their high diffusivity and sensitivity to impurities.

In contrast, n-type silicon has several advantages over p-type silicon for c-Si solar cells. N-type silicon has a lower defect density and is less susceptible to LID, resulting in higher cell efficiency and long-term stability. N-type dopants, such as phosphorus, have a lower diffusivity and are less sensitive to impurities, making them more suitable for high-throughput manufacturing processes. N-type silicon also has a higher tolerance for metal impurities, which can reduce the cost of cell processing.

Despite these advantages, n-type silicon was not as popular before due to challenges in manufacturing and processing. N-type silicon requires a different set of processing steps compared to p-type silicon, which can increase manufacturing complexity and cost. Additionally, n-type silicon is more prone to surface contamination and requires more stringent cleaning procedures.

However, recent advances in n-type silicon technology have addressed many of these challenges, making it a more viable option for c-Si solar cell manufacturing. As a result, there has been a growing interest in n-type silicon technology in recent years, and it is expected to become more widely used in the future.