We have deposited Al2O3 on silicon wafer(100) using Atomic Layer Deposition.I have to calculate its interface trap density(Dit)
Your question is not yet very clear. You may check with the cross-sectional TEM analysis. Depth profiling XPS or SIMS analysis also may give you the information.
Dear Vinay,
welcome,
In order to measure the impedance of your structure yo have to deposit a metal layer above the aluminum oxide to form a metal insulator semiconductor capacitor structure.
By measuring C-V and C-t you can get information about the interface state between the substrate and the aluminum oxide.
For more information please follow the book of S MSze, physics of semiconductor devices.
Best wishes
Or the book by Nicollian and Brews. Note that the top contact needs to be patterned - you could use a shadow mask. Also ensure you have a good ohmic contact on the back of the wafer. There are a number of ways of extracting Dit for CV data. I would use one or more of those techniques.
Hi,
You can measure the C-V and G-V characteristics of your device under different frequencies from 1 Hz to 10 MHz and use general formula (used in S.M.Sze book).
Dear Vinay,
I agree with others on this thread that the classic texts by Sze and Nicollian & Brews will teach you a lot about C-V and G-V measurements.
In addition, and more specific to your experiment, the attached paper describes a detailed analysis of extracting the Dit and capture cross sections of the Al2O3-Si interface from C-V and G-V measurements.
Lachlan Black's PhD thesis (Australian National University) contains more information on the procedure for measuring Al2O3-Si, with longer explanations on the systematic errors that arise in such a measurement.
They're complicated, but once you master C-V and G-V, you'll understand the semiconductor-insulator interface very well.
Article Modeling Recombination at the Si–Al2O3 Interface
Thanks to all for sharing your knowledge and experience. I'll go through the book that is suggested above by Mr. Zekry, Mr. Hall, Mr. Das and Mr. Macintosh. I have made MOS structure of metal/Al2O3/Si and was confused about reference and standard method for electrical characterisation.
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