I have deposited Al2O3 on silicon for MOS characterisation. Now i want to analyse the trap capture cross-section.
It is hard to physically observe the trap. Maybe you can investigate the crystal structure to observe the lattice imperfection.
You can compare the transfer curves before and after trapping. According to the shift of the threshold voltage, the amoumt of trapped carriers can be extracted.
Thanks Mr. Wang for sharing your knowledge. Well, Im looking for the method to find Cn, i.e carrier capture cross section. I went through Nicolian and Brews, but the method there is very complicated. Can u suggest some publications or books for that.
@Vinay PraKash I am sorry that these questions beyond my research field. Hope you can find the proper method soon.
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