J. Allibe with M. Bibes reported that BiFeO3 films directly grown on MgO show many impurities that suggest chemical reaction between substrate and film material. so buffer layer is used for epitaxial growth. (link is given for reference)
Why BiFeO3 reacts with MgO if it is grown directly on MgO substrate?
http://scitation.aip.org/content/aip/journal/apl/96/18/10.1063/1.3402763
There is no problem of growing BiFeO3 films on MgO for epiatixial growth. One can reasonably grow good quality films, with appropriate lattice matched electrode layers.
Kindly see this excellent publication with very useful information
Title; Ferroelectric properties of BiFeO3 thin films deposited on substrates with large lattice mismatch
Authors: Vilas Shelke, Gopalan Srinivasan, and Arunava Gupta
Reference: Vol4, Issue 3-4, (2010)
Journal: Solid State Physics (Rapid Research Letters).
DOI: 10.1002/pssr.200903428
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K. Sreenivas
Mgo substrate are commonly used for epitaxial growth.
You can used freshly cleaved substrates.
Or sometime if you are using polished substrate, without proper cleaning, then there can be a chance of some residual polishing compounds, and greasy pastes lying on the substrate surface, and when you have a substrate temperature, you can have tremendous carbon contamination on the MgO crystal surface, this can cause, or lead to undesirable reactions with the deposited layer.
K. Sreenivas
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