Dear Sethu George ,

Can you plot the profile of the majority carrier concentration to see how your doping appear in this profile?

The other request is to plot your energy level diagram at equilibrium.

Best wishes.

Abdelhalim abdelnaby Zekry Thank you sir for the response.Iam attaching the figures you asked for reference, structure for simulation, Energy band diagram for vertical cutline through gate , electron concentrations under gate and a transfer characteristic for a drain bias of 0.05V where gate bias is swept from -0.8 to 0.3

Abdelhalim abdelnaby Zekry

Dear Sethu George ,

I could not resolve the figures because they are very small and when I dowloaded them I could not open them.

Any how but I could reach to some conclusions:

Your band bending near the surface of the channel is relatively small.

You must bend the conduction band downward at equilibrium much under the Fermi level in this way the channel is formed.

Your channel is not yet well formed.

Try to decrease the electron affinity of the widegap material. Also try to increase its doping

Please try to to run the simulations under the operating condition which i propose.

and report.

Best wishes

Abdelhalim abdelnaby Zekry Thank you Sir

Please note that you can find a good graph for this in

Chapter five

of the book

Microelectronics

by

Grabel

from

Northeastern University.

Ziad Sobih Thank you..Will have a check as you suggest