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Questions related from Sethu George
I am simulating an InAlAs/InGaAs/InP HEMT, the simulation works pretty fine until a gate bias voltage of 0.2 V.But for the output characteristics simulation the drain current beyond 0.2V is not...
27 May 2021 2,370 2 View
While simulating InAlAs/InGaAs/InP HEMT in silvaco, the electron concentration in the channel seems very low in spite of a-Si delta doping(3E-12/cm2 equivalent in cm3 is 10^19). The delta doping...
16 December 2020 2,604 7 View