Is there any better technique relative to one reported by Kwon and co-workers, The interfacial segregation growth technique using Graphite powder coating on a poly-crystalline Ni layer (deposited on the glass substrate) yields High crystalline quality of single- layer graphene synthesized at low temperatures? Since in this case, the problem lies in the deposition of Ni on the glass and then it's removal after the growth.
I recommend this article for you:
Liu, Z., Song, L., Zhao, S., Huang, J., Ma, L., Zhang, J., Lou, J. and Ajayan, P.M., 2011. Direct growth of graphene/hexagonal boron nitride stacked layers. Nano letters, 11(5), pp.2032-2037.
Dear Mukesh,
The removal of base metal catalyst layer (Ni/Cu) after CVD grown graphene would be always a challenge. People thus directly deposit graphene layer on semiconducting/metal substrate of their choice and use it as such.
As in your case the substrate is glass, so I suggest you to peel of graphene and transfer it onto glass/quartz. By optimizing the process steps few stacked layers (>05) of high quality defect free graphene layers could be created on glass substrate.
Best of luck.
Debmalya Roy Sir,
I know this fact actually, since transferring monolayer graphene on to a substrate is prone to degrade the quality of graphene imposing contamination or defects on it. So it was seen that when graphite powder is coated on Ni substate (has high carbon solubility) deposited on glass, graphene layer forms by interfacial segregation. Afterwards Ni is etched away, thus one gets graphene without any transferring. Hence this method is better than the conventioned CVD growth of Graphene on Ni/Cu.
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