Actually, I wanted to know the answers from the researchers who are working on the projest 'III-Nitride nanowires on metals".
Moreover, regrading your answer, I would like to notify you that growing III-nitride nanowires on metal is far advantageous in many aspects even the stability of nanowires grown on metals will be better rather than their transfer. As I am also working on the growth of GaN nanowires on several substrates and have successfully grown on several substrates using MOCVD.
I don't have experience in fabricating devices, but I have developed nanophotonic structures on different substrates for solar absorption application, and their stability in many adverse environment is excellent.
I think it is useful to here from colleagues who have experience in the technology. Their ideas may be beneficial.
Normally one grows the nano wires on the intended substrate. What about the transfer of nanowires to the metallic substrates?
MBE is an acronym for molecular beam epitaxy first developed by IBM laboratory.
MOCVD: Metal organic chemical vapor deposition.
The MBE is a physical deposition process where one forms beams of ions in a very high vacuum and directs them to a heated substrate where they deposit and may form epitaxial layers under proper growth condition. The apparatus is veru complicated because of the very high vacuum and because of the evaporation and beam forming.
The metal organic CVD is simpler where the metalorganic materials are made to react chemically at the surface of the substrate to deposit the required thin layer.
So, the apparatus is much simpler than the MBE and widely used commercially.