There are several methods to prepare silicopn nanowires. First method is chemical vapour deposition of silicon on the Au precipitates and growning the nanowire on this Au nanoparticles which are situated on the silicon surface. To my mind, it is very promissing. The second method is using several nanocrystals and arranging them along the stright line, melting them and result will be silicon nanowire. The third method is magnetron sputtering of cerium dioxide target and PVD of CeO2 on the glass substrate, and later, silicon deposition by PECVD method. The main idea is cerium dioxide is a crystal media, with lattice constant is approximately equals to silicon lattice constant, because, the crystal structure of silicon will be arranged on the crystal islands of cerium dioxide. The fourth method is very simple. It is necessary to sputter by magnetron sputtering equipment any metal particles, for example, Au,Pt and Ni, after this you can apply the external electric field to the film or substrate. You surely detect the crystalline nanowires between the particles of metal. You can check the result by means of Raman scattering spectroscvopy. The fifth method is nonordinary. You should have vicinal surface of GaAs substrate with 4o. And by using MBE evaporate the silicon nanowires. It will be placed on the sites of vacancies on tyhe surface of As or Ga atoms. By using Raman technique you can test these nanowires.
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