Defects such as cation interstitial and oxygen vacancies affects electrical resistivity in ZnO films so which one has more pronounced effect on electrical properties in ZnO.
Hi,
I think Oxygen vacancy is more responsible for the change in electrical property of ZnO films. Oxygen vacancies act as donor impurities and provide n-type doping to the material. Annealing of samples, compensates the oxygen vacancies and eliminates the mid-gap levels for which the conductivity decreases. You can go through the attached file for more information.
Article Effect of annealing process in tuning of defects in ZnO nano...
Oxygen vacancy in ZnO thin-film increases conductivity. Therefore, intrinsic ZnO film will be more resistive than with O-vacancy. If you are using sputtering system, Reactive sputtering (O2mixed Ar/N2) helps you to get an intrinsic film.
both zinc interstitial and oxygen vacancies can increase the conductivity. As zinc interstitial is shallow type donor and oxygen vacancy is deep donor, so contribution should comes more from Zni, but Zni are very mobile at RT, but Vo are stable ar RT. thats why Vo plays a crucial role in maximum cases.
@Saptarshi: " but Zni are very mobile at RT, but Vo are stable at RT. thats why Vo plays a crucial role in maximum cases "... there are several reports saying "Zni are very mobile at RT".......can you please cite any ref to support your statement "but Vo are stable at RT."
That would be very helpful.
@Arindam,
You can see this reference first.
Article Native point defects in ZnO
Then, follow the cited article.
another related article is Article Rich Variety of Defects in ZnO via an Attractive Interaction...
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