If you want your dopant to make electrically active centers similar to doping in semiconductors, your dopant should have the same radius as the radius of atoms in the lattice. If dopant radius is much larger than it may not be substituted in lattice and create other kinds of defects.
as dr a. kumar said, it is impossible to replace the ions of different various. We often found that the two ions of different ionic radii grow as a crystal of different entities.
Some times it stabilises the Crystal structure and change (increase) the density, for example Cerium ion is replaced with Zirconium ion in Ceria Stabilised Zirconia (Ce-TZP)
A dopant with different size than host will introduce strain in the lattice. If larger, its tensile and if smaller its compressive stress in the lattice.
it depends on kind of structure for hcp if we replaced the matrix atom by another this cause the atom to be replace by the latter (substitution) but for another structure is may be take a site between the atoms . all the replacement cause to change the density and defect