I am working on modifying the band structure of TiO2 semiconductor for visible light photocatalytic activity. For this reason, I would like to dope the metal and/or nonmetal ions into the TiO2 to reduce the bandgap and recombination rate. Any suggestion on the criteria for minimum and maximum dopant concentrations to be studied is highly appreciated.
If possible please explain what will happen if we dope lower than or greater than the suggested concentration level.
The following link may be useful for you https://www.researchgate.net/publication/225115477_Effect_of_dopant_concentration_on_photocatalytic_activity_of_TiO2_film_doped_by_Mn_non-uniformly
As far as I know, we have 2 ways to change the light absorption area of TiO2. One way is to change the internal structure of TiO2, such as creating n or p-type doped semiconductors. Method 2 is simpler, we create hybrid or composite structures to change the absorption margin of TiO2. I have researched on TiO2/GO/Ag hybrid material to photocatalyst at visible light, the ratio of Ag is 1%, which is suitable. Hope to be able to help you.
@ Doan -Quan Mai,
Thanks for your comment. My question is what would be resulted if the Ag ratio decreased below 1%?
For the concentrations of dopants below the recommended level, may the amount is not enough to bring effective defect in the crystal structure that results in the formation of p-n junctions. hence, photocatalytic activity may not be effective. But, the dopants concentration is in excess, besides doped into the crystal lattice will form an additional phase (make composite). This condition (excess) may bring synergy to enhance the photocatalytic activity, but it needs research. Consider also @ Amer Al-Taee suggested manuscript.
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