Dear Researchers,

I am working with a Silicon Substrate based sensor and getting CV curve with Initial and Low voltage -0.2V and High voltage 0.4. However, in the EIS test, the Nyquist plot is not giving the circular shape it's supposed to give at the beginning. I am using CHI660E and in A.C. Impedance test, do I need to set the peak voltage at which I am getting the oxidation peak? Also what should be the voltage range of CA depending on the CV parameters? Your help would be really appreciated.

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