Now I am planning to fabricate p+/n diode on Ge substrate.
I want to know what kind of metal I should use for contact on n-Ge.
Apparently Fermi level pinning presents a problem in these scenarios. There have been some works to unpin the FL, typically by ultrathin oxides or other layers. I suggest taking a look at the following:
Nishi's group, APL 2009 http://dx.doi.org/10.1063/1.3065990
Toriumi's group highly cited Appl Phys Exp from 2008 http://dx.doi.org/10.1143/APEX.1.051406
And Zhou et al. APL 2009 http://dx.doi.org/10.1063/1.3357423
It's possible that easier approaches have been developed since.
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