I am working on MOSFETs. I want to change the polarization voltage of the gate and the subthreshold voltage. I have the breakout library in my disposal and I'm messing around with the transistor's model parameters but I'm not quite sure of which parameter is polarization voltage of the gate and which is the subthreshold voltage. Any help would be greatly appreciated.
Here are the model parameters. Two of them are the ones I'm looking for.
.model MpTSMC180 PMOS
TNOM = 27
TOX = 9.74E-9
XJ = 1E-7
NCH = 4.1589E17
VTH0 = -0.55
K1 = 0.581505
K2 = 0.0273445
K3 = 0
K3B = 10.7066855
W0 = 1E-6
NLX = 7.085816E-8
DVT0W = 0
DVT1W = 0
DVT2W = 0
DVT0 = 0.5427394
DVT1 = 0.3493763
DVT2 = 0.08174
U0 = 116.6094811
UA = 1.563897E-9
UB = 1E-21
UC = -1E-10
VSAT = 1.826166E5
A0 = 1.6423237
AGS = 0.3934878
B0 = 1.149554E-6
B1 = 3.508687E-6
KETA = 0.0146913
A1 = 0.4749659
A2 = 0.31182
RDSW = 309.921929
PRWG = 0.5
PRWB = -0.5
WR = 1
WINT = 0
LINT = 2.558214E-8
XL = -2E-8
XW = -1E-8
DWG = -2.004125E-8
DWB = 1.039815E-8
VOFF = -0.1025445
NFACTOR = 1.9238833
CIT = 0
CDSC = 2.4E-4
CDSCD = 0
CDSCB = 0
ETA0 = 0.0276906
ETAB = -0.0693376
DSUB = 0.6302703
PCLM = 1.3245935
PDIBLC1 = 0
PDIBLC2 = 0.0136588
PDIBLCB = -1E-3
DROUT = 7.780261E-4
PSCBE1 = 1.005282E10
PSCBE2 = 2.90349E-9
PVAG = 3.2027144
DELTA = 0.01
RSH = 7.5
MOBMOD = 1
PRT = 0
UTE = -1.5
KT1 = -0.11
KT1L = 0
KT2 = 0.022
UA1 = 4.31E-9
UB1 = -7.61E-18
UC1 = -5.6E-11
AT = 3.3E4
WL = 0
WLN = 1
WW = 0
WWN = 1
WWL = 0
LL = 0
LLN = 1
LW = 0
LWN = 1
LWL = 0
CAPMOD = 2
XPART = 0.5
CGDO = 6.57E-10
CGSO = 6.57E-10
CGBO = 1E-12
CJ = 1.18422E-3
PB = 0.8552517
MJ = 0.4131208
CJSW = 1.696634E-10
PBSW = 0.6336557
MJSW = 0.2424658
CJSWG = 4.22E-10
PBSWG = 0.6336557
MJSWG = 0.2424658
CF = 0
PVTH0 = 8.414026E-4
PRDSW = 9.9222413
PK2 = 1.47551E-3
WKETA = 2.494855E-3
LKETA = 5.87759E-3
PU0 = -1.8432469
PUA = -6.92569E-11
PUB = 1E-21
PVSAT = 50
PETA0 = 1E-4
PKETA = 2.230497E-3
I suppose you are interested in the sub-threshold regime (or weak inversion) of the MOSFET. For a good introduction on that regime I recommend http://www.ece.utah.edu/~harrison/ece5720/Subthreshold.pdf
I think you have a bit of a confusion on the terms you refer about the MOSFET.
I don't know what you mean by the "subthreshold voltage": there is the "threshold voltage" which separates the regimes of weak (or sub-threshold) and strong inversion in the MOSFETs, and that value is the parameter VTH0 (in your case is -0.55 Volt, an OK value for a enhancement type MOSFET).
The polarization voltage of the gate (if are using the correct term...) is not a spice parameter but IMO it is the voltage Vgs applied between the gate and the source of the MOS. So it is an exogenous variable in your circuit not "programmable" in the simulation model.
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