For a flexible field effect transistor coated by thermal evaporation
Hi. Recently, yttrium and tantalum oxide have shown good performance when prepared by evaporation method.
Best luck.
By using the Oxide material for dielectric medium is there any practical difficulties in deposition by thermal evaporation
You mean after depositing the oxide on flexible substrate, is there any adverse effect on the channel material? or you are worrying about cracking of layers?
If you are using organic material as channel and want to deposit top oxide deposition, then yes you have to check that effect. In case of inorganic material there should not be any problem. About crack formation, its necessary to keep the flexible substrate very flat during processing and needs to be handled very carefully. During bending experiment also substrate should be bent with extra care.
For flexible devices I strongly recommend using organic based devices including the gate material itself.
I expect metal oxide based gates to be replaced in the future with organic based materials (which would yield thinner and more insulating films)
But for inorganic systems, I recommend using polysiloxanes, their derivatives, or even composite materials, which may work for flexible systems
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