Hello!
Sputtering Yield is depending of pressure, temperature and bias of substrate, etc. during technological process. When I have to deal with the new alloy, I make the parameters "X" (temperature, bias, pressure, etc.) and controls sputtering yield by the changing of the magnetron source power. Could You have the possibility of realize experimental process in silicon substrate? I am carried out research about tungsten, so if You need a sputtering yield for tungsten with my parameters, I write You.
Best regards
Sputtering yield of Copper and tungsten would be different.
Because sputtering yield depends on the binding energy.
The sputtering yield will depend upon the incident ion energy hitting the targets (either copper or tungsten).
Yes you can calculate the sputtering yield individually for the metals.
Refer to the book on "glow discharge phenomena" by Brian chapman, which can give you some useful formulae.
Refer to Charles Kittle, you will find a table listing the binding energies of various element in the periodic table. An older version of this book had such a table.
Now for an alloy how the binding energy will change - well this is a difficult question, and also depends on the composition of the alloy.
In case the binding energies are quite different ( say low for copper and very high Tungsten), then in case of an Cu-W alloy while sputtering, you will be sputtering away copper much faster in comparison to Tungsten. and you will end up with a film which is rich in Copper.
It will greatly depend on the composition of the alloy (Cu-Zn).
But definitely making films with such an alloy target, and getting a good compositional control in the deposited films is a challenge.
K. Sreenivas
Try SRIM program (www.srim.org) to calculate sputter yield (atoms/ion). Then, with your ion current density you can calculate sputter rate (nm/sec).
in TRIM program don't forget a correct target density. By default the program takes averaged value for elements forming allow. The program includes surface binding energies for most elements, so takes into account the effect mentioned en above comments/
Thanks Yuriy, I tried TRIM, and No sputtered atoms showed up (I don't know why). I tried different ions and ion energy combinations. Please check the attached screenshot
Also, what value should I use for Lattice Binding Energy? (Cu25W75 alloy should be a a metal matrix composite instead of a true alloy due to the fact that both materials are not mutually soluble)
Ahmed,
In upper right corner in "Damage" window please select "surface sputtering regime"
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