for the best performance of solar cells, light is required to enter the cell through the p-layer. This requirement stems from the difference in e- and hole mobilities in intrinsic layer in p-i-n cell. Accordingly, the drift lengths of holes are shorter than those for electrons. since more e-,hole pairs are generated closer to the entrance of light, more holes can be collected the closer they are to the p-layer, if the light enter through the p-layer.
window layer thickness on photo current in thin film, i don't have proper answer so i have to read....
Hi Rekha,
if you are talking about p-i-n a-Si or uc-Si thin films, then it would be drift length not diffusion length as mentioned by Ramakrishna. In p-n solar cells the photocurrent diffuses to the junction, but for pin they move by drift due to electric field in the I layer. Both diffusion or drift lengths are essential for carrier collection
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