Hi Fu, It is important to note the difference between exciton energy and exciton binding energy, even though these are related. The exciton binding energy is a measure of stability of the electron-hole pair. So for an exciton with high binding energy, it is less likely to be scattered by lattice vibrations to free charge carriers or undergo conversion to free charge carriers due to the presence of impurities or defects. Consequently, the exciton lifetime will be high compared to that of an exciton with weak binding energy. This is an important attribute for electronic applications because an exciton with long lifetime possess several properties that are suited for device operations.
I think you should refer to the time-energy uncertainty relation: deltaE*deltat>=hbar/2.
Dear Fu,
The exciton radiative lift time is inversely proportional to the Binding Energy. you just refer PHYSICAL REVIEW B 85, 045207 (2012).
Hope it helps u.
Hi Fu, It is important to note the difference between exciton energy and exciton binding energy, even though these are related. The exciton binding energy is a measure of stability of the electron-hole pair. So for an exciton with high binding energy, it is less likely to be scattered by lattice vibrations to free charge carriers or undergo conversion to free charge carriers due to the presence of impurities or defects. Consequently, the exciton lifetime will be high compared to that of an exciton with weak binding energy. This is an important attribute for electronic applications because an exciton with long lifetime possess several properties that are suited for device operations.
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