Due to the constraint of the limited capacity of computer clusters, I think usually in molecular dynamics simulation, the target material is heated from room temperature to a temperature that is below the melting temperature in tens of picosecond or several picoseconds or even less simulation time.
Different materials have different melting temperatures, but it seems for metals or graphene or such material with a melting temperature on the magnitude of several thousands Kelvin, the heating rate is about 1000 K/ps. Is this heating rate on the same magnitude with that in the experiments or common life? It feels like the heating speed is much higher in the molecular dynamics simulation.
Could you please tell me what is the proper heating rate to be set in molecular dynamics simulation? What property of the material should be considered as the most important factor for the setting of the heating speed? If it varies with different kinds of materials, please talk about graphene or metals first.
Any help would be much appreciated!