In my opinion, EDX is not sensitive enough for the determination of doping levels. When speaking about doping, you have typical concentrations of 10^-8 - 10^-3. This is much too low for EDX, which is normally used for concentrations of >1%. Of course there could be a solution, maybe TEM-EDX, but I am only familiar with SEM-EDX and there it is really though, not to say impossible.
Actually the EDX analyzer is included into a FIB-SEM system, model FEI Helios NanoLab 650 DualBeam. Is this the technology which you are familiar with?
Well, then it is absolutely not possible to determine the density. If you are really lucky you could see that there is some doping (in heavy doping cases), but you will never be able to quantify it. As I said, EDX is a method for quantifying amounts of 1% and upwards.
You need to look for other techniques, like hall measurements or mass spectroscopy techniques like tof-SIMS, GD-MS or something similar.
Dear Ariel. Perhaps you can detect small quantities of an atomic species by using neutron activation analysis. At Centro Atómico Bariloche, contact with Maria Arribere (TE 0294 4445100, [email protected]).
Suerte!
Dear Miguel, thanks a lot! Neutron activation analysis is a good option to measure concentrations far below 1%. I will contact Dra. Arribere for more details. Gracias otra vez!
Yea, forget EDX. SIMS works for finding the actual amount of atoms. If you are only interested in electrically active dopants, you can use Hall-Effect or C-V measurements. Particularly if you are dealing with common semiconductors like Si and GaAs, I would recommend C-V, it is the easiest and cheapest method I think.
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