Hello,
I was interested in knowing whether using rGO as the charge mediator between a p-type semiconductor and an n-type semiconductor (in a ternary composite, for example g-CN/rGO/α-Fe2O3) would have any negative influences on charge transfer between the two semiconductors by negatively influencing the natural p-n junction which forms at the interface (in the example's case, between g-CN and α-Fe2O3).
I have noticed that rGO or graphene is commonly used as the charge transfer layer, due to its high conductivity, in many ternary composites, but I also happened to notice that both the semiconductors of these composites happen to be n-type semiconductors, for example g-CN/rGO/TiO2.
Hence, my above concern.
Thank you,
Joshua Nigel
Hi Joshua,
The best answer is that it depends. Primarily on the size and relative position of rGO w.r.t. your traditional p and and n-type photocatalysts. People have reported all different kind of systems including z-schemes and transistors using all kinds of charge mediators ranging from Au nanoparticles to graphene.
I haven't had a chance to go through recent literature on the topic, but I am guessing there might be some article on that as well. Coming back to the question: even thin layer of rGO might be enough to disrupt the formation of a p-n junction as the semiconductors are not in contact. As to whether it is bad or not depends entirely on you application.
I would suggest you to read a review article that we published recently, which has a lot of examples of what such bi-phasic photocatalysts (with w/o a charge transfer interface) have been used for.
I hope it helps.
Article Janus nanostructures for heterogeneous photocatalysis
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