Hi everyone, I need your valuable input and appreciate it in advance. I have synthesized SiC thin films on four different substrates (Zirconia, MgO, SiC and Si) by RF-magnetron sputtering. I did, steady state and time resolved photoluminescence study of these films. I found substrate dependent carrier life time i. e. highest at Si (6.52 ns) substrate and lowest on MgO (5.15 ns). Now I want to correlate the observed life time with the PL intensity of the SiC film grown on the different substrate. Can anyone tell me the exact physical parameters to correlate these two results (PL intensity and carrier life time)?. I am attaching the PL emission spectra of these films recorded at an excitation wavelength of 360 nm. In the attached file, 1-Zirconia, 2-MgO, 3-SiC and 4-Si represent the PL of SiC film on different substrates.

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