What is the doping concentration Nd of SiC-FET(1.2kV)?

12 December 2013 0 3K Report

Can anyone tell me what the donor concentration of the intrinsic region of a SiC-MOSFET or better for the no-SiC-JFET is? They are 1.2kV devices. The JFET I use has a punch-through voltage of 1.7kV. I can calculate it on my one but I don't know what field strength I should use. Another problem is the form of the electric field is it triangular or trapezoidal.

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