Actually when preparing N/P Type silicon (Positive type Silicon nano-particles or Negative type Silicon) like Boron doped or Phosphorus doped silicon, used for Energy Conversion solar cell or store applications.
what are the compositions of doping (Si:B) or (Si:P) 10:1,10:2,10:3 ?
ratio - 1:1, 1:2, 2;1
or
Molar ratio, please if you know anybody suggestion regarding B/ P doping compositions?
Dear Thirumal,
The best doping of silicon for solar cells for p-type substrate is 10^17/cm^3 and for the n-emitter is about 10^19/cm^3 to form a nearly optimum p-n junction solar cells. This is valid for single crystal solar cells. For semicrysatline solar cells the almost the same concentrations are required. For amorphous Si solar cells they are pin structure with the i-layer is undoped while the end regions are heavilt doped in the order of 10^20/cm^3. The same holds for microcrysatlline as the amorphous.
Heavy doping is used only in emitter regions.
Best wishes
Dear Thirumal,
The best doping of silicon for solar cells for p-type substrate is 10^17/cm^3 and for the n-emitter is about 10^19/cm^3 to form a nearly optimum p-n junction solar cells. This is valid for single crystal solar cells. For semicrysatline solar cells the almost the same concentrations are required. For amorphous Si solar cells they are pin structure with the i-layer is undoped while the end regions are heavilt doped in the order of 10^20/cm^3. The same holds for microcrysatlline as the amorphous.
Heavy doping is used only in emitter regions.
Best wishes
Dear Thirumal Vediyappan
I fully agree with the answer of Professor Abdelhalim Zekry
Best regards
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