All FETs are "normal" :) If I recall correctly, J-FET is based on reverse-biased semiconductor junction and thus has some gate leakage current due to presence of minority carriers. MOS-FET has gate separated by layer of dielectric material and operates in pure "field" model in static mode MOSFET has zero input current. T-FET is structure is similar to MOS-FET, but it operates in tunneling regime and tends to be faster then MOSFET at low gate potentials. Decent "semiconductor devices" textbook would have all the details.

Thanks Mr. Valery.

The modeling of Junction-less FET(JLFET) and TFET is different, what are physical differences and electrical properties.

https://books.google.com/books/about/Tunneling_Field_Effect_Transistor_Techno.html?id=AN77CwAAQBAJ

https://www.amazon.com/s?ie=UTF8&field-keywords=Theory%20applications%20field-effect%20transistors&index=books

https://www.amazon.com/Different-Types-Field-Effect-Transistors-Applications/dp/9535131753/ref=sr_1_7?s=books&ie=UTF8&qid=1510585010&sr=1-7&keywords=Theory+applications+field-effect+transistors

Also freely available online text

http://www.introni.it/pdf/Teledyne%20-%20Junction%20FETs%20Theory%20and%20Applications.pdf

In JLFET you don't have any doping. You only have intrinsic semiconductor.