Dear Mr. Amit,

I favor to use less 1% as a maximum load ed, because the very high value of doped is caused high defect, random properties and low efficiency of nano compound in any reaction.

Regards,

Dr. Luma M. Ahmed

Thanks Mr. Luma , yeah there is lots of defects created, its like intrinsic channel. In many of the papers 10^19 doping is done for a channel length of 10 nm and radius 2nm. Is this even possible.

what is the limit of this doping, it should have been below 10^10.

Regards

Amit

You can work out from the volume (10nm* pi* (2nm)^2=1.2*10^-25 m^3) relative to the atom density (Si: 5*10^28 atoms per m^3) that there are only ~6000 atoms in total, so a SINGLE dopant atom would already mean a doping level of 1/6000=170ppm=8*10^24 m^3 or ~10^19 cm^-3. I don't think this is technologically reproducible.