Generally speaking you have much greater control in the overall quality of the samples grown by MBE as compared with the sputtering technique, which that also applies to lower dislocation density for MBE grown samples. In fact MBE technique allows control at the single atomic layer, something that one may not achieve using sputtering technique.

Thank you sir for your kind response. Sir, can you have any article regarding this information?

You may search for relevant articles through Google Scholar as an example. However, link to an example article is shown below.

https://www.academia.edu/25269202/Surface_and_structural_disorder_in_MBE_and_sputtering_deposited_Cu_thin_films_revealed_by_X-ray_measurements

Thank you so much sir