Dear Rohit Nimje
The flatband voltage is obtained when the applied gate voltage equals the workfunction difference between the gate metal and the semiconductor (VFB = Fm - Fsc).
The flatband voltage of real MOS structures is further affected by the presence of charge in the oxide or at the oxide-semiconductor interface. In this case, the flatband voltage still corresponds to the voltage, which, when applied to the gate electrode, yields a flat energy band in the semiconductor: Refere to Chapter 6 in my Book (Electronic Devices and Circuits From A to Z), which is available HERE in ResearchGate.
thank you sir, for your valuable information.
In quantum and semi classical case of bulk MOSFET device.
I think, there is vector potential on the top of silicon channel (in between SIO2 and Silicon).
In case applied gate voltage is equals to zero, metal and semiconductor work funtion should not play important role.
what is your observation.
- Badges
- Science topic
- Similar topics
- Chemistry
- Nanotechnology