When we increase the thickness of the active layer and charge transport layer on SCAPs simulation, I am not sure that they affect the open-circuit voltage, short-circuit current and fill factor.
The open-circuit voltage corresponds to the amount of forward bias on the solar cell due to the bias of the solar cell junction with the light-generated current. The open-circuit voltage is shown on the IV curve below. IV curve of a solar cell showing the open-circuit voltage. VOC decreases with temperature.
The open circuit voltage is the voltage difference measured between two terminals when no current is drawn or supplied. The short circuit current is the current that flows when the terminals are forced to have zero voltage difference.
May I take this opportunity to let you know that we have recently published a journal paper in solar energy "A modeling study on utilizing ultra-thin inorganic HTLs in inverted p–n homojunction perovskite solar cells"
You could find related discussion and concept regarding FF, Jsc, Voc, parasitic resistances, band offset (CBO and VBO) both in ETL and HTL of perovskite solar cell, etc in our paper.
In order to meet the simulation requirements, numerical simulation plus parametric sweep should have an agreement with both experimental result and device physics. Moreover, SCAPS-1D software is reliable and capable of doing so, when all simulation requirements are met.
To make a long story short, you may find related literature, discussion plus simulation requirements with experimental data both in our paper and supporting information.
If you have any question, please do not hesitate to ask me in this regard.