Gamma irradiation can modify the physical characteristics of electronic parameters of devices and materials through treatment with ionising radiation energy. This technique can alter the properties of electron-hole pairs in silicon (Si) and silicon dioxide (SiO2). Electronhole pairs increase the wavelength of X-rays or gamma rays when they are scattered. This phenomenon is known as the Compton effect and can be applied in radiography. Several types of radiation dosimeters are currently in use including ion chamber, Geiger-Muller and proportional counters, scintillators, thermoluminescent and bubble dosimeters, activation foils, solid state or silicon detectors, calorimetric, photographic film and chemical methods.
Papers:
Armin Afshari Moghaddam ,An Investigation of Impact of Transistor Gate’s Thickness of Floating GateTransistor in Improvement of Sensitivity of LowPower Gamma-Ray Dosimeters , International Journal of Advanced Biotechnology and Research (IJBR) , Vol-7, Special Issue-Number2-April, 2016
Nisha, Rekha Yadav , Radiation Effect on MOSFET at Deep Submicron Technology, Volume 3, Issue 8, August 2013
Shashank Nagaraj , Vikram Singh,, 60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs , Indian Journal of Materials Science ,Volume 2013, Article ID 465905
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